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| SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors DESCRIPTION *With TO-220C package *DARLINGTON *High DC current gain *Low collector saturation voltage *Complement to type TIP115/116/117 APPLICATIONS *For industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP110/111/112 ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER TIP110 VCBO Collector-base voltage TIP111 TIP112 TIP110 VCEO Collector-emitter voltage TIP111 TIP112 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC TC=25 Collector power dissipation Ta=25 Junction temperature Storage temperature 2 150 -65~150 Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 60 80 100 5 2 4 50 50 W V A A mA V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP110 VCEO(SUS) Collector-emitter sustaining voltage TIP111 TIP112 VCE(sat) VBE Collector-emitter saturation voltage Base-emitter on voltage TIP110 ICBO Collector cut-off current TIP111 TIP112 TIP110 ICEO Collector cut-off current TIP111 TIP112 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance IC=2A ,IB=8mA IC=2A ; VCE=4V VCB=60V, IE=0 VCB=80V, IE=0 VCB=100V, IE=0 VCE=30V, IB=0 VCE=40V, IB=0 VCE=50V, IB=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=2A ; VCE=4V IE=0 ; VCB=10V,f=0.1MHz IC=30mA, IB=0 CONDITIONS SYMBOL TIP110/111/112 MIN 60 80 100 TYP. MAX UNIT V 2.5 2.8 V V 1 mA 2 mA 2 1000 500 100 mA pF 2 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE TIP110/111/112 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP110/111/112 4 |
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